unisonic technologies co., ltd tul1102 npn silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2014 unisonic technologies co., ltd qw-r203-034.d high voltage fast-switching npn power transistor ? description the tul1102 is manufactured which is using high voltage multi epitaxial planar technology for high voltage capability and high switching speeds. for enhancing switching speeds while maintaining a wide rbsoa, the tul1102 uses a cellular emitter structure with planar edge termination. because of an increased intermediate layer which has an intrinsic ruggedness, and it enables the transistor to withstand a high collector current level during breakdown condition, without using the transil protection. ? features * high voltage * dynamic parameters: low spread * for reliable operation: minimum lot-to-lot spread * high switching speed ? ordering information ordering number package pin assignment packing lead free plating halogen-free 1 2 3 TUL1102L-TA3-T tul1102g-ta3-t to-220 b c e tube tul1102l-tf1-t tul1102g-tf1-t to-220f1 b c e tube tul1102l-tm3-t tul1102g-tm3-t to-251 b c e tube tul1102l-tn3-r tul1102g-tn3-r to-252 b c e tape reel tul1102l-tq2-t tul1102g-tq2-t to-263 b c e tube tul1102l-tq2-r tul1102g-tq2-r to-263 b c e tape reel ? marking information package marking to-220 to-220f1 to-251 to-252 to-263
tul1102 npn silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r203-034.d ? absolute maximum ratings parameter symbol ratings unit collector-emitter voltage (v be = 0) v ces 1100 v collector-emitter voltage (i b = 0) v ceo 450 v emitter-base voltage (i c = 0) v ebo 12 v collector current i c 4 a collector peak current (t p <5 ms) i cm 8 a base current i b 2 a base peak current (t p <5 ms) i bm 4 a power dissipation (t c = 25c) to-220/to-263 p d 70 w to-220f1 30 to-251/to-252 45 junction temperature t j +150 c storage temperature t stg -65 ~ +150 c note: absolute maximum ratings are the values beyond which the device will be damaged permanently. absolute maximum ratings are only stress ratings and it is not implied for functional device operation. ? thermal data parameter symbol ratings unit junction to case to-220/to-263 jc 1.78 c/w to-220f1 4.2 to-251/to-252 2.78 ? electrical characteristics (t c = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current i ces v ce = 1100 v, v be = 0 100 a emitter cut-off current i ebo v eb = 12 v, i b = 0 1 ma collector-emitter sustaining voltage v ceo ( sus ) i c = 100ma, i b = 0 (note) 450 v collector-emitter satu ration voltage v ce ( sat ) i c = 2 a, i b = 400 ma (note) 1.5 v base-emitter satura tion voltage v be ( sat ) i c = 2 a, i b = 400 ma (note) 1.5 v dc current gain (note) h fe i c = 250ma, v ce = 5 v i c = 2a, v ce =5v 35 12 70 20 resistive load storage time t s i c = 2.5 a, v cc = 250 v i b1 =0.5a,i b2 =1a 2.5 s fall time t f t p = 30 ms 300 ns avalanche energy e ar l = 2mh, c = 1.8nf i br 2.5a, 25c < t c <125c 6 mj note: pulsed: pulse duration = 300 s, duty cycle 1.5 %
tul1102 npn silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r203-034.d ? test circuit v in t p r g t1 l=2mh v cc c i br t.u.t fig.1 energy rating test circuit 5v
tul1102 npn silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r203-034.d ? typical characteristics
tul1102 npn silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r203-034.d ? typical characteristics(cont.) switching time resistive load t(ns) switching time resistive load t(ns) reverse biased soa 4 3 2 1 0 0 200 400 600 800 collector emitter saturation voltage v ce (v) h fe =5 v bb(off) =-5v r bb(off) =0 collector current i c (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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